http://www.syndicatemizzou.org Thu, 24 May 2012 06:42:56 GMT en-us 40 Center for eResearch Connecting you with the University of Missouri’s innovative research and creative activity http://www.syndicatemizzou.org/images/logo.png 384 80 http://syndicatemizzou.org/resources/jurisson/ipod/Jurisson5.m4v Education http://syndicatemizzou.org/resources/jurisson/ipod/Jurisson5.m4v 3 Tue, 12 Sep 2006 16:38:39 GMT http://syndicatemizzou.org/resources/chandrasekhar/ipod/Chandrasekhar2.m4v Education http://syndicatemizzou.org/resources/chandrasekhar/ipod/Chandrasekhar2.m4v “As an electron travels around, it keeps bumping into stuff,” Chandrasekhar offers as a simple explanation. “So the behavior of the electron gets defined not just by all the other stuff around it, but by the fact that it is bumping into the edges” of different materials. Quantum mechanics helps to explain the different kinds of behaviors that occur when dealing with very small scales. 3 Mon, 19 Feb 2007 20:59:09 GMT http://syndicatemizzou.org/resources/chandrasekhar/ipod/Chandrasekhar3.m4v Education http://syndicatemizzou.org/resources/chandrasekhar/ipod/Chandrasekhar3.m4v All of this background history is necessary in order to appreciate the important contributions Chandrasekhar has made to this field. That is, once people realized that these “bologna and cheese” heterostructures could be reliably constructed, a whole bunch of new questions arose. This is where Chandrasekhar’s research comes into play. “We don’t really ‘grow’ the devices…or even the materials,” she stipulates. “The work we do is on studying the properties of these devices: how to control them, what drives them, how far you can be off and still be within your range.” 3 Mon, 19 Feb 2007 21:00:31 GMT http://syndicatemizzou.org/resources/chandrasekhar/ipod/Chandrasekhar4.m4v Education http://syndicatemizzou.org/resources/chandrasekhar/ipod/Chandrasekhar4.m4v Chandrasekhar and Uma Venkateswaran, her graduate collaborator, designed and built a low-temperature pressure cell to conduct optical studies on semiconductor heterostructures. The device can apply pressures up to 1 million pounds per square inch, changing the energy levels so that the researchers can study the properties of these materials. 3 Mon, 19 Feb 2007 21:01:33 GMT